National Academy of Sciences of Belarus

KORSHUNOV Fedor Pavlovich

Fedor Pavlovich Korshunov (b. 15.05.1934, v. Travna, Krasnopol district, Mogilev region), a scientist in the field of radiation physics of solids, physics of semiconductors and microelectronics. Corresponding Member of the National Academy of Sciences of Belarus (1984), Doctor of Engineering Sciences (1975), Professor (1981).

Works on solid state radiation physics, semiconductor physics, microelectronics, and radiation technology of semiconductor devices. Established the causes of the degradation of the characteristics of semiconductor pn-structures when irradiated by ionizing radiation. He discovered radiation effects of expansion and displacement of the pn-junction, thermal stabilization of the avalanche breakdown voltage of the pn-junction, the effect of low doses of irradiation in high-resistance silicon, epitaxial films and MIS structures, leading to an ordering of non-equilibrium structure. X-rays in silicon crystals were experimentally recorded and investigated when channeling electrons with an energy of 4–5 MeV.

Author of more than 460 scientific papers, incl. 3 monographs, 69 inventions.

State Prize of the BSSR in 1980 for the research complex and the development of advanced semiconductor manufacturing technology and its introduction into production.

Awarded with the Order of the Badge of Honor (1986), 3 medals.

Major papers:

  1. Радиационные эффекты в полупроводниковых приборах. Мн.: Наука и техника, 1978 (в соавт.).
  2. Проникающие излучения в технологии полупроводниковых приборов и интегральных микросхем // Вестник АН СССР. 1982. №11.
  3. Воздействие радиации на интегральные микросхемы. Мн.: Наука и техника, 1986 (в соавт.).