National Academy of Sciences of Belarus

ASEEV Alexander Leonidovich

Alexander Leonidovich Aseev (b. 24.09.1946, Ulan-Ude, Republic of Buryatia, Russia) - physicist. Foreign member of the National Academy of Sciences of Belarus (2014). Academician of the Russian Academy of Sciences (2006, Corresponding Member since 2000). Doctor of Physico-Mathematical Sciences (1990). Honorary Member of the Physicotechnical Institute named after A.F. Ioffe of the RAS (St. Petersburg) (2006), honorary Doctor of Tomsk State University (2010), St. Petersburg Academic University (2018). Honorary Professor of Buryatia State University (2010). Honored Worker of Science and Technology of the Russian Federation (2011). Honorary Citizen of Ulan-Ude (2016). Honorary resident of Novosibirsk (2018).

The main direction of scientific activity is connected with the study of the atomic structure and electronic properties of low-dimensional semiconductor systems, the development of semiconductor micro-, opto- and nanoelectronics technologies. He studied the atomic mechanisms of clustering of intrinsic point defects in silicon and germanium, the properties of monatomic steps on the surface of silicon. Based on in situ experiments on the irradiation of semiconductor crystals by electrons in HREM, investigated the interaction of point defects between themselves, impurity atoms, surface and dislocations. Found that the features of these reactions are determined by metastable configurations of point defects in a diamond-like crystal lattice; studied the mechanisms of atomic processes on the surface and interfaces during the formation of low-dimensional semiconductor systems for the new generation of nanoelectronics element base. Studied the smallest multi-terminal device created by electron lithography and reactive ion etching based on a GaAs/AlGaAs heterojunction. He showed that a three-contact quantum dot in a two-dimensional electron gas is a small interference transistor controlled by adding only a few electrons to a point. I calculated a picture of the three-dimensional electrostatics of the device under study, coherent two-dimensional transport and the interference of electronic waves at a triangular point. Developed a technology for producing silicon-on-insulator (SOI) plates with monocrystalline silicon films up to 1 nm thick (DeleCut method), on the basis of which SOI field-effect transistors of micron, submicron and nanometer dimensions, with enhanced radiation and temperature resistance.

Author of over 250 scientific papers, including 5 monographs and 9 patents.

Prize of the Government of the Russian Federation in the field of education (2012) for the scientific and practical development of "Scientific, educational and methodological support for the training of highly qualified specialists in the field of distributed computing technologies".

Awarded with the medal of the Order for Services to the Fatherland of the I (2017) and II (2008) degrees, the Order of the Polar Star (2010, Mongolia), and the distinction Civic Prowess of the Sakha Republic (2009, Yakutia).

Major papers:

  1. Скопления междоузельных атомов в кремнии и германии. Новосибирск, 1991 (в соавт.); Berlin, 1994.
  2. Когерентное рассеяние в малой квантовой точке // Письма в ЖЭТФ. 2004. Т. 80, № 9 (в соавт.).
  3. Моноатомные ступени на поверхности кремния. Новосибирск, 2006 (в соавт.).
  4. Нанотехнологии в полупроводниковой электронике // Вестн. РАН. 2006. Т. 76, № 7.